| PART |
Description |
Maker |
| HCS361 HCS361-SN HCS361-P HCS361-ISN |
IC CONV AC/DC -5V 500MA SIP12
IC AC/DC CONV 12V 350MA SIP12
IC CONV AC/DC -5V 100MA SIP9
IC CONV AC/DC -12V 90MA SIP9 而Keeloq跳码编码
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HCS360 HCS360-ISN HCS360-SN HCS360-IP MICROCHIPTEC |
IC AC/DC CONV 15V 200MA SIP12
IC AC/DC CONV -12V 300MA SIP12
IC CONV AC/DC -12V 500MA SIP12 而Keeloq跳码编码
IC AC/DC CONV 24V 200MA SIP12 而Keeloq跳码编码
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| BS62LV1600ECG70 BS62LV1600ECG55 BS62LV1600FCP55 BS |
Very Low Power CMOS SRAM 2M X 8 bit 极低功耗CMOS SRAMx 8
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PBGA48
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PDSO44
|
BRILLIANCE SEMICONDUCTOR INC
BRILLIANCE SEMICONDUCTOR, Inc.
Brilliance Semiconducto...
|
| P87C51SBBB P87C51UFBB |
80C51 8-bit microcontroller family 4K/128 OTP/ROM/ROMless low voltage 2.7V.5.5V low power high speed 33 MHz
CMOS single-chip 8-bit microcontrollers
|
Philips
|
| BS62LV2001TI BS62LV2001 BS62LV2001DC BS62LV2001DI |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit
Very low power/voltage CMOS SRAM 256K X 8 bit, 70ns
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
|
| KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|
| IDT6116 IDT6116LA IDT6116LA120D IDT6116LA120DB IDT |
Enhanced JFET Precision Operational Amplifier 8-PDIP 0 to 70 的CMOS静态RAM 16K的（2K × 8位）
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-PDIP -40 to 85 2K X 8 STANDARD SRAM, 20 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 20 ns, PDIP24
Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-PDIP -40 to 85 2K X 8 STANDARD SRAM, 35 ns, PDIP24
TRANS NPN 80VCEO 1A MT-3 的CMOS静态RAM 16K的（2K × 8位）
Dual Enhanced JFET Precision Operational Amplifier 8-SOIC -40 to 85 的CMOS静态RAM 16K的（2K × 8位）
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 120 ns, CDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, CDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 35 ns, CDIP24
TRANS NPN LF 50VCEO .1A SS-MINI 的CMOS静态RAM 16K的（2K × 8位）
20 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 的CMOS静态RAM 16K的（2K × 8位）
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP -40 to 85 2K X 8 STANDARD SRAM, 45 ns, CDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDSO24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDIP24
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP -40 to 85 2K X 8 STANDARD SRAM, 45 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, CDIP24
Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-SOIC 0 to 70 的CMOS静态RAM 16K的（2K × 8位）
CMOS STATIC RAM 16K (2K x 8 BIT) 的CMOS静态RAM 16K的（2K × 8位）
Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-PDIP 0 to 70
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SO 0 to 70
Enhanced-JFET Precision Operational Amplifier 8-SOIC 0 to 70
Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC 0 to 70
CABLE SMA-RA/SMA-RA 36 RG-58
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-PDIP 0 to 70
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-SO 0 to 70
CABLE SMA/BNC 12 RG-142
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-SOIC -40 to 85
Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-PDIP 0 to 70
Enhanced JFET Precision Operational Amplifier 8-SOIC 0 to 70
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC -40 to 85
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC 0 to 70
|
INTEGRATED DEVICE TECHNOLOGY INC
AME, Inc.
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
|
Integrated Circuit Solu...
Fuji Electric Holdings Co., Ltd.
ICSI[Integrated Circuit Solution Inc]
|
| K6T2008U2A K6T2008U2A-B K6T2008U2A-F K6T2008U2A-FF |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
|
Samsung semiconductor
|
| KM62U256CLG-8L KM62U256CLG-10L |
32Kx8 bit Low Power AND Low Vcc CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
